Research Progress of Gas Sensing Performance of 2D Hexagonal WO3

Yueqi Li; Qin Zhou; Shoubing Ding; Zhimin Wu

doi:10.3389/fchem.2021.786607

Research Progress of Gas Sensing Performance of 2D Hexagonal WO₃

Front Chem. 2021 Dec 6:9:786607. doi: 10.3389/fchem.2021.786607. eCollection 2021.

Authors

Yueqi Li¹, Qin Zhou¹, Shoubing Ding¹, Zhimin Wu¹

Affiliation

¹ Chongqing Key Laboratory of Photoelectric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, China.

Abstract

Metal oxide semiconductor gas sensing materials have attracted great research interest in the gas sensor field due to their outstanding physical and chemical properties, low cost, and easy preparation. Among them, two-dimensional hexagonal tungsten trioxide (2D h-WO₃) is especially interesting because of its high sensitivity and selectivity to some gases. We firstly introduce the characteristics of 2D h-WO₃ gas sensing materials and discuss the effects of microstructure, oxygen vacancy, and doping modification on the gas sensing properties of 2D h-WO₃ mainly. Finally, we explore the application of 2D h-WO₃ gas sensing materials and propose some research directions.

Keywords: 2D; gas sensing; hexagonal WO3; metal oxide semiconductor; oxygen vacancy.

Publication types

Review