Defect passivation of a perovskite film by ZnIn2S4 nanosheets for efficient and stable perovskite solar cells

Jianting Huang; Jinting Li; Linqi Zheng; Guohui Zhong; Yafeng Li; Junming Li; Mingdeng Wei

doi:10.1039/d1cc06071f

Defect passivation of a perovskite film by ZnIn₂S₄ nanosheets for efficient and stable perovskite solar cells

Chem Commun (Camb). 2022 Jan 13;58(5):653-656. doi: 10.1039/d1cc06071f.

Authors

Jianting Huang¹, Jinting Li¹, Linqi Zheng¹, Guohui Zhong¹, Yafeng Li¹, Junming Li^{1

2}, Mingdeng Wei^{1

3}

Affiliations

¹ Fujian Key Laboratory of Electrochemical Energy Storage Materials, Fuzhou University, Fuzhou, Fujian 350116, China. liyf@fzu.edu.cn.
² Beijing Key Laboratory for Sensors, Beijing Information Science & Technology University, Beijing, 100192, China.
³ Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Changzhou, 213164 Jiangsu, China.

PMID: 34918722
DOI: 10.1039/d1cc06071f

Abstract

The defects of a perovskite film were first passivated by two dimensional ZnIn₂S₄ nanosheets, the non-radiation recombination at interfaces was suppressed and the contact of the perovskite film with water vapour in the air was avoided, resulting in a high efficiency of 20.55%.