This study investigates the influence of aryl and ethynyl linkers as well the effect of various pi-end-groups on the performance of the quinoline-based organic field-effect transistors. A series of new functionalized quinolines with D-π-A-π-D and A-π-A-π-A architectures are designed and synthesized via the Sonagashira cross-coupling reaction. All the new compounds are well characterized and their photophysical properties are studied. The bottom gate-top contact-organic field-effect transistors devices are fabricated using the spin-coating technique. By employing the pre and post-annealing technique, films with uniform surface coverage are obtained. The variation in the end-groups results in versatile packing arrangements which determine their good charge transport properties. The p-channel transistor behavior is observed for all the new compounds. Among the molecules studied, methoxyphenyl and thiophen-2-yl terminal functionalized with D-π-A-π-D architecture exhibit the higher p-channel transistor characteristics with hole mobilities of 1.39 and 1.33 cm2 V-1 s-1 , respectively. The good charge carrier mobilities are supported by an electron-donating methoxy group and thiophene as the end-groups with high highest occupied molecular orbitals (HOMO) and lowest unoccupied molecular orbitals (LUMO) levels, extensive π-conjugation, and better self-assembly.
Keywords: organic electronics; organic field-effect transistors; quinoline; self-assembly; semiconductors.
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