Fabrication of AlGaN High Frequency Bulk Acoustic Resonator by Reactive RF Magnetron Co-sputtering System

Yu-Chen Chang; Ying-Chung Chen; Chien-Chuan Cheng

doi:10.3390/ma14237377

Fabrication of AlGaN High Frequency Bulk Acoustic Resonator by Reactive RF Magnetron Co-sputtering System

Materials (Basel). 2021 Dec 1;14(23):7377. doi: 10.3390/ma14237377.

Authors

Yu-Chen Chang¹, Ying-Chung Chen¹, Chien-Chuan Cheng²

Affiliations

¹ Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
² Department of Electronic Engineering, HungKuo Delin University of Technology, New Taipei 236, Taiwan.

Abstract

In this study, aluminum gallium nitride (AlGaN) thin films are used as the piezoelectric layers to fabricate solidly mounted resonators (SMR) for high frequency acoustic wave devices. AlGaN film is deposited on a Bragg reflector, composed of three pairs of Mo and SiO₂ films, through a reactive radio frequency (RF) magnetron co-sputtering system at room temperature. The optimized deposition parameters of AlGaN film have a sputtering power of 175 W for Al target, sputtering power of 25 W for GaN target, N₂ flow ratio (N₂/Ar + N₂) of 60%, and sputtering pressure of 10 mTorr. The obtained AlGaN film has a smooth surface, uniform crystal grains, and strong c-axis orientation. The contents of Al and Ga in the AlGaN film, analyzed by energy dispersive X-ray spectroscopy (EDS) are 81% and 19%, respectively. Finally, the frequency response s₁₁ of the obtained SMR device shows that the center frequency is 3.60 GHz, the return loss is about -8.62 dB, the electromechanical coupling coefficient (k_t²) is 2.33%, the quality factor (Q) value is 96.93 and the figure of merit (FoM) value is 2.26.

Keywords: aluminum gallium nitride; frequency response; piezoelectric; solidly mounted resonator.