The occurrence of strain is inevitable for the growth of lattice mismatched heterostructures. It affects greatly the mechanical, electrical and optical properties of nano-objects. It is also the case for nanowires which are characterized by a high surface to volume ratio. Thus, the knowledge of the strain distribution in nano-objects is critically important for their implementation into devices. This paper presents an experimental data for II-VI semiconductor system. Scanning nanobeam electron diffraction strain mapping technique for hetero-nanowires characterized by a large lattice mismatch (>6% in the case of CdTe/ZnTe) and containing segments with nano-twins has been described. The spatial resolution of about 2 nm is 10 times better than obtained in synchrotron nanobeam systems. The proposed approach allows us to overcome the difficulties related to nanowire thickness variations during the acquisition of the nano-beam electron diffraction data. In addition, the choice of optimal parameters used for the acquisition of nano-beam diffraction data for strain mapping has been discussed. The knowledge of the strain distribution enables, in our particular case, the improvement of the growth model of extremely strained axial nanowires synthetized by vapor-liquid solid growth mechanism. However, our method can be applied for the strain mapping in nanowire heterostructures grown by any other method.
Keywords: ZnTe/CdTe nanowires; circular Hough transform; elastic strain investigation; hetero-nanowires; nanobeam electron diffraction (NBED); strain mapping.
© 2022 IOP Publishing Ltd.