An all two-dimensional vertical heterostructure graphene/CuInP2S6/MoS2for negative capacitance field effect transistor

Adeel Liaqat; Yiheng Yin; Sabir Hussain; Wen Wen; Juanxia Wu; Yuzheng Guo; Chunhe Dang; Ching-Hwa Ho; Zheng Liu; Peng Yu; Zhihai Cheng; Liming Xie

doi:10.1088/1361-6528/ac4063

An all two-dimensional vertical heterostructure graphene/CuInP₂S₆/MoS₂for negative capacitance field effect transistor

Nanotechnology. 2021 Dec 24;33(12). doi: 10.1088/1361-6528/ac4063.

Authors

Adeel Liaqat^{1

2}, Yiheng Yin³, Sabir Hussain^{1

2}, Wen Wen^{1

2}, Juanxia Wu¹, Yuzheng Guo³, Chunhe Dang^{1

2}, Ching-Hwa Ho⁴, Zheng Liu⁵, Peng Yu⁶, Zhihai Cheng⁷, Liming Xie^{1

2}

Affiliations

¹ CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
² University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
³ School of Electrical Engineering and Automation, Wuhan University, Wuhan 430072, People's Republic of China.
⁴ Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan, Republic of China.
⁵ School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore.
⁶ State Key Laboratory of Optoelectronic Materials and Technologies School of Materials Science and Engineering Sun Yat-sen University Guangzhou 510275, People's Republic of China.
⁷ Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China.

PMID: 34874305
DOI: 10.1088/1361-6528/ac4063

Abstract

As scaling down the size of metal oxide semiconductor field-effect transistors (FETs), power dissipation has become a major challenge. Lowering down the sub-threshold swing (SS) is known as an effective technique to decrease the operating voltage of FETs and hence lower down the power consumption. However, the Boltzmann distribution of electrons (so-called 'Boltzmann tyranny') implements a physical limit to the SS value. Use of negative capacitance (NC) effect has enabled a new path to achieve a low SS below the Boltzmann limit (60 mV dec^-1at room temperature). In this work, we have demonstrated a NC-FET from an all two-dimensional (2D) metal ferroelectric semiconductor (MFS) vertical heterostructure: Graphene/CuInP₂S₆/MoS₂. The negative capacitance from the ferroelectric CuInP₂S₆has enabled the breaking of the 'Boltzmann tyranny'. The heterostructure based device has shown steep slopes switching below 60 mV dec^-1(lowest to < 10 mV dec^-1) over 3 orders of source-drain current, which provides an avenue for all 2D material based steep slope FETs.

Keywords: ferroelectric; field effect transistor; graphene; two-dimensional material; van der Waals heterostructure.