Author Correction: A quantitative approach for trap analysis between Al_0.25Ga_0.75N and GaN in high electron mobility transistors

Affiliations

• ¹ Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea.
• ² Korea Advanced Nano Fab Center, Suwon, Gyeonggi‑do, 16229, Korea.
• ³ NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa, 243‑0198, Japan.
• ⁴ Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan, 44610, Korea. twkim78@ulsan.ac.kr.