A silicon carbide (SiC) trench MOSFET featuring fin-shaped gate and integrated Schottky barrier diode under split P type shield (SPS) protection (FS-TMOS) is proposed by finite element modeling. The physical mechanism of FS-TMOS is studied comprehensively in terms of fundamental (blocking, conduction, and dynamic) performance and transient extreme stress reliability. The fin-shaped gate on the sidewall of the trench and integrated Schottky diode at the bottom of trench aim to the reduction of gate charge and improvement on the third quadrant performance, respectively. The SPS region is fully utilized to suppress excessive electric field both at trench oxide and Schottky contact when OFF-state. Compared with conventional trench MOSFET (C-TMOS), the gate charge, Miller charge, Von at third quadrant, Ron,sp·Qgd, and Ron,sp·Qg of FS-TMOS are significantly reduced by 34%, 20%, 65%, 0.1%, and 14%, respectively. Furthermore, short-circuit and avalanche capabilities are discussed, verifying the FS-TMOS is more robust than C-TMOS. It suggests that the proposed FS-TMOS is a promising candidate for next-generation high efficiency and high-power density applications.
Keywords: fin-shaped gate; integrated SBD; silicon carbide (SiC) trench MOSFET; split P shield (SPS); transient extreme stress.