Adaptable and complex optical characterization of photonic integrated devices, permitting to unearth possible design and fabrication errors in the different workflow steps are highly desired in the community. Here, we propose a technique capable of resolving full optical amplitude and phase response, in both frequency and time domains, of a photonic integrated device. It relies on optical frequency domain interferometry and makes use of a novel integrated architecture; a 3-way interferometer enabling single input and single output detection. We derive the test structure design rules and provide extensive experimental validation in silicon nitride and silicon on insulator technologies, by testing relevant devices such as arrayed waveguide grating, Mach-Zehnder interferometers, and ring resonators. Horizontal and vertical chip coupling, different external setup arrangements, and the optical dispersion de-embedding inherent to the technique are demonstrated. Finally, we discuss why this characterization approach might lay the groundwork of a standard testing tool for photonic integrated devices.