Spin memory effect in charged single telecom quantum dots: erratum

Opt Express. 2021 Oct 25;29(22):36460. doi: 10.1364/OE.445635.

Abstract

This erratum corrects the value of the wetting layer thickness provided in our Article [Opt. Express29, 34024 (2021)10.1364/OE.438708]. This misprint does not influence the results and conclusions presented in the original Article.