Non-volatile multi-level cell storage via sequential phase transition in Sb7Te3/GeSb6Te multilayer thin film

Zhehao Xu; Xiao Su; Sicong Hua; Jiwei Zhai; Sannian Song; Zhitang Song

doi:10.1088/1361-6528/ac3613

Non-volatile multi-level cell storage via sequential phase transition in Sb₇Te₃/GeSb₆Te multilayer thin film

Nanotechnology. 2021 Nov 22;33(7). doi: 10.1088/1361-6528/ac3613.

Authors

Zhehao Xu¹, Xiao Su¹, Sicong Hua¹, Jiwei Zhai¹, Sannian Song², Zhitang Song²

Affiliations

¹ Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, School of Materials Science & Engineering, Tongji University, Shanghai 201804, People's Republic of China.
² State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.

PMID: 34731838
DOI: 10.1088/1361-6528/ac3613

Abstract

For high-performance data centers, huge data transfer, reliable data storage and emerging in-memory computing require memory technology with the combination of accelerated access, large capacity and persistence. As for phase-change memory, the Sb-rich compounds Sb₇Te₃and GeSb₆Te have demonstrated fast switching speed and considerable difference of phase transition temperature. A multilayer structure is built up with the two compounds to reach three non-volatile resistance states. Sequential phase transition in a relationship with the temperature is confirmed to contribute to different resistance states with sufficient thermal stability. With the verification of nanoscale confinement for the integration of Sb₇Te₃/GeSb₆Te multilayer thin film, T-shape PCM cells are fabricated and two SET operations are executed with 40 ns-width pulses, exhibiting good potential for the multi-level PCM candidate.

Keywords: multi-level cell; multilayer thin film; non-volatile storage; phase-change memory.