Quantum dot (QD)-based RGB micro-LED technology is seen as one of the most promising approaches towards full color micro-LED displays. In this work, we present a novel nanoporous GaN (NP-GaN) structure that can scatter light and host QDs, as well as a new type of micro-LED array based on an NP-GaN embedded with QDs. Compared to typical QD films, this structure can significantly enhance the light absorption and stability of QDs. As a result, the green and red QDs exhibited light conversion efficiencies of 90.3% and 96.1% respectively, leading to improvements to the luminous uniformity of the green and red subpixels by 90.7% and 91.2% respectively. This study provides a viable pathway to develop high-uniform and high-efficient color conversion micro-LED displays.
Keywords: high uniform; micro-LED; nanoporous-GaN; quantum dot.