A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor

Qingzhi Meng; Qijing Lin; Feng Han; Weixuan Jing; Yangtao Wang; Zhuangde Jiang

doi:10.3390/ma14206193

A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor

Materials (Basel). 2021 Oct 18;14(20):6193. doi: 10.3390/ma14206193.

Authors

Qingzhi Meng¹, Qijing Lin^{1

2

3

4}, Feng Han^{1

2}, Weixuan Jing¹, Yangtao Wang¹, Zhuangde Jiang^{1

2}

Affiliations

¹ State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
² Collaborative Innovation Center of High-End State Key Manufacturing Equipment, Xi'an Jiaotong University, Xi'an 710054, China.
³ School of Mechanical and Manufacturing Engineering, Xiamen Institute of Technology, Xiamen 361021, China.
⁴ Chongqing Technology and Business University, Nan'an District, Chongqing 400067, China.

Abstract

A double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) as a terahertz (THz) detector at 315 GHz frequency is proposed and fabricated in this paper. The structure of the epitaxial layer material in the detector is optimized, and the performance of the GaN HEMT THz detector is improved. The maximum responsivity of 10 kV/W and minimum noise equivalent power (NEP) of 15.5 pW/Hz^0.5 are obtained at the radiation frequency of 315 GHz. The results are comparable to and even more promising than the reported single-channel (SC) GaN HEMT detectors. The enhancement of THz response and the reduction of NEP of the DC GaN HEMT detector mainly results from the interaction of 2DEG in the upper and lower channels, which improves the self-mixing effect of the detector. The promising experimental results mean that the proposed DC GaN/AlGaN HEMT THz detector is capable of the practical applications of THz detection.

Keywords: double-channel; high-electron-mobility transistor; noise equivalent power; responsivity; terahertz detector.

Abstract

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