Trioctylphosphine accelerated growth of InP quantum dots at low temperature

Xinsu Zhang; Hao Lv; Weishuo Xing; Yanjun Li; Chong Geng; Shu Xu

doi:10.1088/1361-6528/ac3180

Trioctylphosphine accelerated growth of InP quantum dots at low temperature

Nanotechnology. 2021 Nov 12;33(5). doi: 10.1088/1361-6528/ac3180.

Authors

Xinsu Zhang¹, Hao Lv¹, Weishuo Xing¹, Yanjun Li¹, Chong Geng¹, Shu Xu¹

Affiliation

¹ Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, People's Republic of China.

PMID: 34670196
DOI: 10.1088/1361-6528/ac3180

Abstract

Significant advance was realized on the economic synthesis of InP quantum dots (QDs) by using aminophosphines as phosphorus precursor. However, the low reaction activity and thermal degradation of aminophosphines bring severe difficulty for growth control of InP QDs. Here, we employed trioctylphosphine (TOP) as a surfactant to accelerate the growth of the InP QDs. The reaction mechanism study reveals that the TOP could form a reactive complex with indium halides that effectively accelerates the formation of InP monomer and reduces the demand for reaction temperature. On this basis, the effect of reaction temperature, precursors, and zinc halide additives on the growth of the TOP-InP QDs was explored. This strategy alleviates the difficulty in growth control of InP QDs and also benefits to the synthesis of luminescent InP/ZnS core-shell QDs within visible regime. A white-light emitting diode device was fabricated with the InP/ZnS QDs that demonstrates their application potential in light-emitting devices.

Keywords: InP; aminophosphine; crystal growth; quantum dots; trioctylphosphine.