Generating terahertz waves using thin-layered materials holds great potential for the realization of integrated terahertz devices. However, previous studies have been limited by restricted radiation intensity and finite efficiency. Exploiting materials with higher efficiency for terahertz emission has attracted increasing interest worldwide. Herein, with visible-light excitation, a thin-layered GaTe film is demonstrated to be a promising emitter of terahertz radiation induced by the shift-current photovoltaic effect. Through theoretical calculations, a transient charge-transfer process resulting from the asymmetric structure of GaTe is shown to be the origin of an ultrafast shift current. Furthermore, it was found that the amplitude of the resulting terahertz signals can be manipulated by both the fluence of the pump laser and the orientation of the sample. Such high emission efficiency from the shift current indicates that the layered material (GaTe) is an excellent candidate for photovoltaics and terahertz emitters.
Keywords: charge transfer; gallium telluride; layered material; shift current; terahertz emission.