4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

Sinan Bugu; Shimpei Nishiyama; Kimihiko Kato; Yongxun Liu; Shigenori Murakami; Takahiro Mori; Thierry Ferrus; Tetsuo Kodera

doi:10.1038/s41598-021-99560-x

4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

Sci Rep. 2021 Oct 8;11(1):20039. doi: 10.1038/s41598-021-99560-x.

Authors

Sinan Bugu¹, Shimpei Nishiyama², Kimihiko Kato³, Yongxun Liu³, Shigenori Murakami³, Takahiro Mori³, Thierry Ferrus⁴, Tetsuo Kodera⁵

Affiliations

¹ Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, Japan. sinanbugu@gmail.com.
² Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, Japan.
³ Device Technology Research Institute (D-Tech), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan.
⁴ Hitachi Cambridge Laboratory, J. J. Thomson Avenue, CB3 0HE, Cambridge, UK.
⁵ Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, Japan. kodera.t.ac@m.titech.ac.jp.

Abstract

We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi qubit platforms.

Abstract

Grants and funding