As a high-performance optical material, fused silica is widely applied in high-power laser and photoelectric systems. However, laser induced damage (LID) of fused silica severely limits the output power and performance of these systems. Due to the values in strong field physics and improving the load capacity and performance of high power systems at UV laser, LID at 355 nm of fused silica has attracted much attention. It has been found that, even be treated by advanced processing technologies, the actual damage threshold of fused silica at 355 nm is far below the intrinsic threshold. It means that there is an absorption source near 355 nm in fused silica. However, to date, the absorption source is still unknown. In this paper, a absorption source near 355 nm is found by first-principles calculations. We find that the absorption source near 355 nm is neutral oxygen-vacancy defect (NOV, ≡Si-Si≡) and this defect originates from the oxygen deficiency of fused silica. Our results indicate that NOV defect can be taken as a damage precursor for 355 nm UV laser, and this precursor can be obviously reduced by increasing the ratio of oxygen to silicon. Present work is valuable for exploring damage mechanisms and methods to improve the damage threshold of fused silica at UV laser.