The realization of efficient III-nitride emitters in the green-to-amber region is fundamental to the monolithic integration of multicolor emitters and the development of III-nitride-based full-color high-resolution displays. A hybrid nucleation layer, which includes sputtered AlN and mid-temperature GaN components, was proposed for the development of efficient III-nitride emitters in the green-to-amber region. The mid-temperature GaN component in the hybrid nucleation layer induced the formation of a stacking fault band structure, which effectively relaxed the misfit stress at the GaN/sapphire interface. A reduced dislocation density and in-plane compressive stress in InGaN/GaN multiple quantum wells were obtained on the hybrid nucleation layer in comparison with the conventional sputtered AlN nucleation layer. Consequently, a significantly enhanced internal quantum efficiency and improved light output power were achieved for the LEDs grown on the hybrid nucleation layer. This gain is attributed to the increased localization depth and spatial overlapping of the electron and hole wave functions. In the present study, the hybrid nucleation layer provides a promising approach for the pursuit of efficient III-nitride emitters in the green-to-amber region.