Simulation and experimental research of a high-order Bragg grating semiconductor laser

Appl Opt. 2021 Jul 20;60(21):6076-6079. doi: 10.1364/AO.432175.

Abstract

In this paper, the influence of the epitaxial structure on distributed Bragg reflector (DBR) grating characteristics is studied by simulation analysis. Comparative analysis shows that the symmetrical epitaxial structure can achieve a lower threshold current and, thus, a higher power. Based on the simulated structure, a DBR laser based on a symmetric epitaxial structure was fabricated, and a single longitudinal mode laser output at ∼1060nm was obtained. The maximum power was 104.5 mW, and the side mode suppression ratio (SMSR) is 43 dB.