Arming metasurface with active materials furnishes a feasible solution to dynamically control over terahertz (THz) waves, which is extremely significant for the realization of upcoming sixth generation telecommunications. However, the present active materials are mainly limited to single external driving field, hindering the capability of metasurface for flexible manipulation of THz waves. Besides, less attention has been paid to the energy question how to significantly reduce the pump threshold for achieving the desired function. Here, a germanium (Ge) hybrid Fano metasurface under dual-stimulus control is experimentally demonstrated. Photoexcitation of Ge thin film enables 100% modulation depth of Fano resonance and ultrafast switching time within 10 ps. By adding current-bias, the pump threshold to modulate the metasurface is greatly reduced from 1600 to 200 µJ cm-2 . Different from the optical modulation independent of film thickness, it is found that the current function is in proportion with the thickness of Ge thin film. Moreover, it is demonstrated that compared to the single optical-stimulus, the THz amplitude modulation is increased by 56.3% under dual-stimulus function. This work naturally improves the flexibility and practicality of Ge-based metadevice and inspires more innovations to boost the development of switchable sensing, lasing spacer, and nonlinear systems.
Keywords: Fano resonance; dual-stimulus control; germanium thin film; pump threshold; ultrafast switching.
© 2021 Wiley-VCH GmbH.