The fabrication of a graphene-silicon (Gr-Si) junction involves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene onto a patterned n-type Si substrate, covered by Si3N4, produces a Gr-Si device, in which the parallel MIS consists of a Gr-Si3N4-Si structure surrounding the Gr-Si junction. The Gr-Si device exhibits rectifying behavior with a rectification ratio up to 104. The investigation of its temperature behavior is necessary to accurately estimate the Schottky barrier height (SBH) at zero bias, φb0 = 0.24 eV, the effective Richardson's constant, A* = 7 × 10-10 AK-2 cm-2, and the diode ideality factor n = 2.66 of the Gr-Si junction. The device is operated as a photodetector in both photocurrent and photovoltage mode in the visible and infrared (IR) spectral regions. A responsivity of up to 350 mA/W and an external quantum efficiency (EQE) of up to 75% are achieved in the 500-1200 nm wavelength range. Decreases in responsivity to 0.4 mA/W and EQE to 0.03% are observed above 1200 nm, which is in the IR region beyond the silicon optical band gap, in which photoexcitation is driven by graphene. Finally, a model based on two parallel and opposite diodes, one for the Gr-Si junction and the other for the Gr-Si3N4-Si MIS structure, is proposed to explain the electrical behavior of the Gr-Si device.
Keywords: Gr-Si junction; Schottky diode; graphene; heterojunction; infrared; noise equivalent power; photodetector; quantum efficiency; responsivity; visible.