In this work, three-dimensional finite element analysis (3D FEA) of quasi-surface acoustic wave (QSAW) resonators with high accuracy is reported. The QSAW resonators consist of simple molybdenum (Mo) interdigitated transducers (IDT) on solidly mounted stacked layers of AlN/Mo/Si. Different to the SAW resonators operating in the piezoelectric substrates, the reported resonators are operating in the QSAW mode, since the IDT-excited Rayleigh waves not only propagate in the thin piezoelectric layer of AlN, but also penetrate the Si substrate. Compared with the commonly used two-dimensional (2D) FEA approach, the 3D FEA method reported in this work shows high accuracy, in terms of the resonant frequency, temperature coefficient of frequency (TCF), effective coupling coefficient (keff2) and frequency response. The fabricated QSAW resonator has demonstrated a keff2 of 0.291%, series resonant frequency of 422.50 MHz, and TCF of -23.418 ppm/°C in the temperature range between 30 °C and 150 °C, for the design of wavelength at 10.4 μm. The measurement results agree well with the simulations. Moreover, the QSAW resonators are more mechanically robust than lamb wave devices and can be integrated with silicon-based film bulk acoustic resonator (FBAR) devices to offer multi-frequency function in a single chip.
Keywords: aluminum nitride; finite element analysis; microelectromechnical systems (MEMS); quasi-surface acoustic wave (QSAW) resonator.