Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization

Daria D Bezshlyakh; Hendrik Spende; Thomas Weimann; Peter Hinze; Steffen Bornemann; Jan Gülink; Joan Canals; Joan Daniel Prades; Angel Dieguez; Andreas Waag

doi:10.1038/s41378-020-00198-y

Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization

Microsyst Nanoeng. 2020 Oct 19:6:88. doi: 10.1038/s41378-020-00198-y. eCollection 2020.

Authors

Daria D Bezshlyakh^{1

2}, Hendrik Spende^{1

2

3}, Thomas Weimann⁴, Peter Hinze⁴, Steffen Bornemann^{1

2

3}, Jan Gülink^{1

2

3}, Joan Canals⁵, Joan Daniel Prades⁵, Angel Dieguez⁵, Andreas Waag^{1

2

3}

Affiliations

¹ Institute of Semiconductor Technology, Technische Universität Braunschweig, Hans-Sommer Str. 66, 38106 Braunschweig, Germany.
² Laboratory for Emerging Nanometrology, Langer Kamp 6 a/b, 38106 Braunschweig, Germany.
³ Epitaxy Competence Center ec2, Technische Universität Braunschweig, Hans-Sommer Str. 66, 38106 Braunschweig, Germany.
⁴ Nanostructuring and Clean Room Center Infrastructure, Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany.
⁵ Department of Electronic and Biomedical Engineering, University of Barcelona, Carrer Marti i Franques 1, 08028 Barcelona, Spain.

Abstract

The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources atthe microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually. Our approach is based on nanoLED arrays that can directly address each array element and a self-pitch with dimensions below the wavelength of light. The design and fabrication processes are explained in detail and possess two geometries: a 6 × 6 array with 400 nm LEDs and a 2 × 32 line array with 200 nm LEDs. These nanoLEDs are developed as core elements of a novel on-chip super-resolution microscope. GaN technology, based on its physical properties, is an ideal platform for such nanoLEDs.

Keywords: Micro-optics; Nanophotonics and plasmonics.