In2O3:H-Based Hole-Transport-Layer-Free Tin/Lead Perovskite Solar Cells for Efficient Four-Terminal All-Perovskite Tandem Solar Cells

Somayeh Moghadamzadeh; Ihteaz M Hossain; Moritz Loy; David Benedikt Ritzer; Hang Hu; Dirk Hauschild; Adrian Mertens; Jan-Philipp Becker; Amir A Haghighirad; Erik Ahlswede; Lothar Weinhardt; Uli Lemmer; Bahram Abdollahi Nejand; Ulrich W Paetzold

doi:10.1021/acsami.1c06457

In₂O₃:H-Based Hole-Transport-Layer-Free Tin/Lead Perovskite Solar Cells for Efficient Four-Terminal All-Perovskite Tandem Solar Cells

ACS Appl Mater Interfaces. 2021 Oct 6;13(39):46488-46498. doi: 10.1021/acsami.1c06457. Epub 2021 Sep 22.

Authors

Somayeh Moghadamzadeh^{1

2}, Ihteaz M Hossain^{1

2}, Moritz Loy³, David Benedikt Ritzer^{1

2}, Hang Hu^{1

2}, Dirk Hauschild^{4

5}, Adrian Mertens^{1

2}, Jan-Philipp Becker³, Amir A Haghighirad⁶, Erik Ahlswede³, Lothar Weinhardt^{4

5}, Uli Lemmer^{1

2}, Bahram Abdollahi Nejand^{1

2}, Ulrich W Paetzold^{1

2}

Affiliations

¹ Light Technology Institute (LTI), Karlsruhe Institute of Technology, Engesserstrasse 13, 76131 Karlsruhe, Germany.
² Institute of Microstructure Technology (IMT), Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany.
³ Center for Solar Energy and Hydrogen Research Baden-Württemberg (ZSW), Meitnerstrasse 1, Stuttgart 70563, Germany.
⁴ Institute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany.
⁵ Institute for Chemical Technology and Polymer Chemistry (ITCP), Karlsruhe Institute of Technology, Engesserstrasse 18/20, 76128 Karlsruhe, Germany.
⁶ Institute for Quantum Materials and Technologies (IQMT), Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, D-76021, 76344 Eggenstein-Leopoldshafen, Germany.

PMID: 34551256
DOI: 10.1021/acsami.1c06457

Abstract

Narrow-band gap (NBG) Sn-Pb perovskites with band gaps of ∼1.2 eV, which correspond to a broad photon absorption range up to ∼1033 nm, are highly promising candidates for bottom solar cells in all-perovskite tandem photovoltaics. To exploit their potential, avoiding optical losses in the top layer stacks of the tandem configuration is essential. This study addresses this challenge in two ways (1) removing the hole-transport layer (HTL) and (2) implementing highly transparent hydrogen-doped indium oxide In₂O₃:H (IO:H) electrodes instead of the commonly used indium tin oxide (ITO). Removing HTL reduces parasitic absorption loss in shorter wavelengths without compromising the photovoltaic performance. IO:H, with an ultra-low near-infrared optical loss and a high charge carrier mobility, results in a remarkable increase in the photocurrent of the semitransparent top and (HTL-free) NBG bottom perovskite solar cells when substituted for ITO. As a result, an IO:H-based four-terminal all-perovskite tandem solar cell (4T all-PTSCs) with a power conversion efficiency (PCE) as high as 24.8% is demonstrated, outperforming ITO-based 4T all-PTSCs with PCE up to 23.3%.

Keywords: IO:H transparent electrodes; all-perovskite tandem; low-band gap; narrow-band gap; parasitic absorption; perovskite solar cells; perovskite−perovskite tandem.