Enhanced resistive switching performance in yttrium-doped CH3NH3PbI3 perovskite devices

Feifei Luo; Liuxia Ruan; Junwei Tong; Yanzhao Wu; Caixiang Sun; Gaowu Qin; Fubo Tian; Xianmin Zhang

doi:10.1039/d1cp02878b

Enhanced resistive switching performance in yttrium-doped CH₃NH₃PbI₃ perovskite devices

Phys Chem Chem Phys. 2021 Oct 6;23(38):21757-21768. doi: 10.1039/d1cp02878b.

Authors

Feifei Luo¹, Liuxia Ruan¹, Junwei Tong¹, Yanzhao Wu¹, Caixiang Sun¹, Gaowu Qin², Fubo Tian³, Xianmin Zhang¹

Affiliations

¹ Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China. zhangxm@atm.neu.edu.cn.
² The State Key Lab of Rolling and Automation, Northeastern University, Shenyang 110819, China.
³ State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.

PMID: 34550133
DOI: 10.1039/d1cp02878b

Abstract

In this study, yttrium-doped CH₃NH₃PbI₃ (Y-MAPbI₃) and pure CH₃NH₃PbI₃ (MAPbI₃) perovskite films have been fabricated using a one-step solution spin coating method in a glove box. X-ray diffractometry and field-emission scanning electron microscopy were used to characterize the crystal structures and morphologies of perovskite films, respectively. It was found that the orientation of the crystal changed and the grains became more uniform in Y-MAPbI₃ film, compared with the pure MAPbI₃ perovskite film. The films were used to prepare the resistive switching memory devices with the device structure of Al/Y-MAPbI₃ (MAPbI₃)/ITO-glass. The memory performance of both devices was studied and showed a bipolar resistive switching behavior. The Al/MAPbI₃/ITO device had an endurance of about 328 cycles. In contrast, the Al/Y-MAPbI₃/ITO device exhibited an enhanced performance with a long endurance up to 3000 cycles. Moreover, the Al/Y-MAPbI₃/ITO device also showed a higher ON/OFF ratio of over 10³, long retention time (≥10⁴ s), lower operation voltage (±0.5 V) and outstanding reproducibility. Additionally, the conduction mechanism of the high resistance state transformed from space-charge limited current for a Y free device to the Schottky emission after Y doping. The present results indicate that the Al/Y-MAPbI₃/ITO device has a great potential to be used in high-performance memory devices.