Three-dimensional perovskite nanowire array-based ultrafast resistive RAM with ultralong data retention

Yuting Zhang; Swapnadeep Poddar; He Huang; Leilei Gu; Qianpeng Zhang; Yu Zhou; Shuai Yan; Sifan Zhang; Zhitang Song; Baoling Huang; Guozhen Shen; Zhiyong Fan

doi:10.1126/sciadv.abg3788

Three-dimensional perovskite nanowire array-based ultrafast resistive RAM with ultralong data retention

Sci Adv. 2021 Sep 3;7(36):eabg3788. doi: 10.1126/sciadv.abg3788. Epub 2021 Sep 3.

Authors

Yuting Zhang^{1

2}, Swapnadeep Poddar^{1

2}, He Huang³, Leilei Gu¹, Qianpeng Zhang^{1

2}, Yu Zhou¹, Shuai Yan⁴, Sifan Zhang⁴, Zhitang Song⁴, Baoling Huang³, Guozhen Shen⁵, Zhiyong Fan^{1

2

6

7}

Affiliations

¹ Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
² Guangzhou HKUST Fok Ying Tung Research Institute, Nansha, Guangzhou 511458, China.
³ Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong SAR, China.
⁴ State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
⁵ State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
⁶ Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
⁷ HKUST-Shenzhen Research Institute, No. 9 Yuexing First RD, South Area, Hi-tech Park, Nanshan, Shenzhen 518057, China.

Abstract

Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with a potential to bridge the gap between the traditional volatile and fast dynamic RAMs and the nonvolatile and slow FLASH memories. Here, we report electrochemical metallization (ECM) Re-RAMs based on high-density three-dimensional halide perovskite nanowires (NWs) array as the switching layer clubbed between silver and aluminum contacts. NW Re-RAMs made of three types of methyl ammonium lead halide perovskites (MAPbX₃; X = Cl, Br, I) have been explored. A trade-off between device switching speed and retention time was intriguingly found. Ultrafast switching speed (200 ps) for monocrystalline MAPbI₃ and ~7 × 10⁹ s ultralong extrapolated retention time for polycrystalline MAPbCl₃ NW devices were obtained. Further, first-principles calculation revealed that Ag diffusion energy barrier increases when lattice size shrinks from MAPbI₃ to MAPbCl₃, culminating in the trade-off between the device switching speed and retention time.