We synthesized single crystals of marokite (CaMn2O4)-type orthorhombic manganese (II,III) oxide, γ-Mn3O4, in a multianvil apparatus at pressures of 10-24 GPa. The magnetic, electronic, and optical properties of the crystals were investigated at ambient pressure. It was found that γ-Mn3O4 is a semiconductor with an indirect band gap Eg of 0.96 eV and two antiferromagnetic transitions (TN) at ∼200 and ∼55 K. The phase stability of the γ-Mn3O4 crystals was examined in the pressure range of 0-60 GPa using single-crystal X-ray diffraction and Raman spectroscopy. A bulk modulus of γ-Mn3O4 was determined to be B0 = 235.3(2) GPa with B' = 2.6(6). The γ-Mn3O4 phase persisted over the whole pressure range studied and did not transform or decompose upon laser heating of the sample to ∼3500 K at 60 GPa. This result seems surprising, given the high-pressure structural diversity of iron oxides with similar stoichiometries. With an increase in pressure, the degree of distortion of MnO6 polyhedra decreased. Furthermore, there are signs indicating a limited charge transfer between the Mn3+ ions in the octahedra and the Mn2+ ions in the trigonal prisms. Our results demonstrate that the high-pressure behavior of the structural, electronic, and chemical properties of manganese oxides strongly differs from that of iron oxides with similar stoichiometries.