Ultra-high dielectric tuning performance and double-set resistive switching effect achieved on the Bi2NiMnO6 thin film prepared by sol-gel method

Wen-Min Zhong; Qiu-Xiang Liu; Yan-Ping Jiang; Min-Lin Deng; Wan-Peng Li; Xin-Gui Tang

doi:10.1016/j.jcis.2021.08.109

Ultra-high dielectric tuning performance and double-set resistive switching effect achieved on the Bi₂NiMnO₆ thin film prepared by sol-gel method

J Colloid Interface Sci. 2022 Jan 15;606(Pt 2):913-919. doi: 10.1016/j.jcis.2021.08.109. Epub 2021 Aug 18.

Authors

Wen-Min Zhong¹, Qiu-Xiang Liu², Yan-Ping Jiang¹, Min-Lin Deng¹, Wan-Peng Li¹, Xin-Gui Tang³

Affiliations

¹ School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Centre, Guangzhou 510006, P. R. China.
² School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Centre, Guangzhou 510006, P. R. China. Electronic address: liuqx@gdur.edu.cn.
³ School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Centre, Guangzhou 510006, P. R. China. Electronic address: xgtang@gdut.edu.cn.

PMID: 34487938
DOI: 10.1016/j.jcis.2021.08.109

Abstract

With the development of mobile terminals, tunable capacitors for signal processing and memristors for calculation have received a lot of attention. Combining a tunable capacitor and a memristor can improve the performance of mobile terminals and reduce space requirements. In this article, we report on Bi₂NiMnO₆ (BNMO) films with high dielectric tuning and nonvolatile resistive switching (RS) effects. The BNMO films are fabricated by the sol-gel method and annealed at different temperatures. It exhibits a dielectric tunability of up to 92%. This high dielectric tunability may be attributed to the modulation of the interface dipole by the electric field. When an electric field is applied, the interface dipole of the BNMO film is far away from the interface of the BNMO, and then forms a conductive channel where anions and cations are mixed. The BNMO films are found to have a double-set type effect due to its dielectric tunability properties. This work introduces an ultra-high dielectric tuning material and a new type of RS effect on BNMO thin film, which can achieve tuning and memory behavior on a device.

Keywords: Bi(2)NiMnO(6); Dielectric tunability; Resistive switching; Thin film.