In order to solve issues of air pollution, to monitor human health, and to promote agricultural production, gas sensors have been used widely. Metal oxide semiconductor (MOS) gas sensors have become an important area of research in the field of gas sensing due to their high sensitivity, quick response time, and short recovery time for NO2, CO2, acetone, etc. In our article, we mainly focus on the gas-sensing properties of MOS gas sensors and summarize the methods that are based on the interface effect of MOS materials and micro-nanostructures to improve their performance. These methods include noble metal modification, doping, and core-shell (C-S) nanostructure. Moreover, we also describe the mechanism of these methods to analyze the advantages and disadvantages of energy barrier modulation and electron transfer for gas adsorption. Finally, we put forward a variety of research ideas based on the above methods to improve the gas-sensing properties. Some perspectives for the development of MOS gas sensors are also discussed.
Keywords: MOS gas sensors; gas-sensing mechanism; gas-sensing properties; improvement methods; research ideas.