Zero-phonon lines of nitrogen-cluster states in GaN x As1- x : H identified by time-resolved photoluminescence

Zero-phonon lines of nitrogen-cluster states in GaN _x As_{1- x} : H identified by time-resolved photoluminescence

J Mater Sci. 2008;43(12):4344-4347. doi: 10.1007/s10853-008-2643-9. Epub 2008 Jun 1.

K Hantke^{1

2}, S Horst¹, S Chatterjee¹, P J Klar^{1

3}, K Volz¹, W Stolz¹, W W Rühle¹, F Masia⁴, G Pettinari⁴, A Polimeni⁴, M Capizzi⁴

¹ Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany.
² Present Address: Max-Planck-Institute for Dynamics and Self-Organization, Bunsenstraße 10, 37073 Gottingen, Germany.
³ Present Address: Institute of Experimental Physics I, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392 Giessen, Germany.
⁴ CNISM and Dipartimento di Fisica, Sapienza Universitá di Roma, Piazzale A. Moro 2, 00185 Rome, Italy.

No abstract available

Keywords: Carrier Relaxation; Incorporated Nitrogen Atom; Optical Excitation; Optical Matrix Element; TRPL Measurement.