The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

Caihong Li; Juntong Zhu; Wen Du; Yixuan Huang; Hao Xu; Zhengang Zhai; Guifu Zou

doi:10.1186/s11671-021-03581-4

The Photodetectors Based on Lateral Monolayer MoS₂/WS₂ Heterojunctions

Nanoscale Res Lett. 2021 Jul 31;16(1):123. doi: 10.1186/s11671-021-03581-4.

Authors

Caihong Li¹, Juntong Zhu², Wen Du¹, Yixuan Huang¹, Hao Xu^{3

4}, Zhengang Zhai⁵, Guifu Zou⁶

Affiliations

¹ Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
² the College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China.
³ School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China. hao.xu.15@uestc.edu.cn.
⁴ the State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China. hao.xu.15@uestc.edu.cn.
⁵ the 36th Research Institute of China Electronics Technology Group Corporation, Jiaxing, 314033, People's Republic of China.
⁶ the College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China. guifuzou@suda.edu.cn.

Abstract

Monolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS₂/WS₂ heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 × 10¹¹ Jones. In addition, the 1/f noise obtained from the current power spectrum is not conductive to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.

Keywords: Lateral monolayer heterostructure; MoS2/WS2 heterojunction; Photodetector; Sharp interface.

Abstract

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