An electron backscattered diffraction (EBSD) method provides information about the crystallographic structure of materials. However, a surface subjected to analysis needs to be well-prepared. This usually requires following a time-consuming procedure of mechanical polishing. The alternative methods of surface preparation for EBSD are performed via electropolishing or focus ion beam (FIB). In the present study, plasma etching using a glow discharge optical emission spectrometer (GD-OES) was applied for surface preparation for EBSD analysis. The obtained results revealed that plasma etching through GD-OES can be successfully used for surface preparation for EBSD analysis. However, it was also found that the plasma etching is sensitive for the alloy microstructure, i.e., the presence of intermetallic phases and precipitates such as carbides possess a different sputtering rate, resulting in non-uniform plasma etching. Preparation of the cross-section of oxidized CM247 revealed a similar problem with non-uniformity of plasma etching. The carbides and oxide scale possess a lower sputtering rate than the metallic matrix, which caused formation of relief. Based on obtained results, possible resolutions to suppress the effect of different sputtering rates are proposed.
Keywords: EBSD; GD-OES; alloy microstructure; plasma etching.