High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics

Chengli Wang; Zhiwei Fang; Ailun Yi; Bingcheng Yang; Zhe Wang; Liping Zhou; Chen Shen; Yifan Zhu; Yuan Zhou; Rui Bao; Zhongxu Li; Yang Chen; Kai Huang; Jiaxiang Zhang; Ya Cheng; Xin Ou

doi:10.1038/s41377-021-00584-9

High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics

Light Sci Appl. 2021 Jul 5;10(1):139. doi: 10.1038/s41377-021-00584-9.

Authors

Chengli Wang^#^{1

2}, Zhiwei Fang^#³, Ailun Yi^#^{1

2}, Bingcheng Yang^{1

2}, Zhe Wang^{2

4}, Liping Zhou^{1

2}, Chen Shen¹, Yifan Zhu^{1

2}, Yuan Zhou^{2

4}, Rui Bao³, Zhongxu Li^{1

2}, Yang Chen^{1

2}, Kai Huang¹, Jiaxiang Zhang^{5

6}, Ya Cheng^{7

8}, Xin Ou^{9

10}

Affiliations

¹ State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China.
² The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China.
³ The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, 200241, Shanghai, China.
⁴ State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800, Shanghai, China.
⁵ State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China. jiaxiang.zhang@mail.sim.ac.cn.
⁶ The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China. jiaxiang.zhang@mail.sim.ac.cn.
⁷ The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, 200241, Shanghai, China. ya.cheng@siom.ac.cn.
⁸ State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800, Shanghai, China. ya.cheng@siom.ac.cn.
⁹ State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China. ouxin@mail.sim.ac.cn.
¹⁰ The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China. ouxin@mail.sim.ac.cn.

^# Contributed equally.

Abstract

The realization of high-quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies. Here, photonic microresonators with a mean Q factor of 6.75 × 10⁶ were demonstrated on a 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, as determined by a statistical analysis of tens of resonances. Using these devices, broadband frequency conversions, including second-, third-, and fourth-harmonic generations have been observed. Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time, to the best of our knowledge. Meanwhile, by engineering the dispersion properties of the SiC microresonator, we have achieved broadband Kerr frequency combs covering from 1300 to 1700 nm. Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.

Abstract

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