Influence of annealing temperature on the optoelectronic properties of ITZO thin films

Anning Ding; Ruisong You; Shulin Luo; Jianhong Gong; Shumei Song; Kunlun Wang; Bo Dai; Hui Sun

doi:10.1088/1361-6528/ac0dda

Influence of annealing temperature on the optoelectronic properties of ITZO thin films

Nanotechnology. 2021 Jul 12;32(40). doi: 10.1088/1361-6528/ac0dda.

Authors

Anning Ding¹, Ruisong You², Shulin Luo¹, Jianhong Gong¹, Shumei Song², Kunlun Wang², Bo Dai³, Hui Sun²

Affiliations

¹ School of Mechanical, Electrical and Information Engineering, Shandong University, Weihai 264209, People's Republic of China.
² School of Space Science and Physics, Shandong Key Laboratory of Optical Astronomy and Solar-Terrestrial Environment, Shandong University, Weihai 264209, People's Republic of China.
³ State Key Laboratory of Environmental-friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, People's Republic of China.

PMID: 34161926
DOI: 10.1088/1361-6528/ac0dda

Abstract

In this work, the electrical conductivity and optical transparency of the In-Sn-Zn-O (ITZO) films annealed at different temperatures were investigated. The results show that the ITZO films transformed from amorphous phase to crystalline phase after annealed in the air. The transmittance of the films improves significantly and all exceed 88%. Meanwhile, the annealed ITZO films exhibit a significant enhancement in conductivity. In particular, ITZO film annealed at 650 °C has high electrical conductivity (∼4.94 × 10²S cm^-1) and an excellent figure of merit (∼5.94 × 10^-4Ω^-1). Moreover, ITZO thin film transistors were prepared and their performance was tested. After annealing, the high electrical properties of the active layer make the gate regulation ability of the thin film transistors degrade. The annealed films with excellent optoelectronic properties can be applied to transparent electrodes.

Keywords: ITZO thin films; RF magnetron sputtering; annealing temperature; optoelectronic properties.