Highly sensitive gas sensing platforms based on field effect Transistor-A review

Pan Zhang; Yin Xiao; Jingjing Zhang; Bingjie Liu; Xiaofei Ma; Yong Wang

doi:10.1016/j.aca.2021.338575

Highly sensitive gas sensing platforms based on field effect Transistor-A review

Anal Chim Acta. 2021 Aug 8:1172:338575. doi: 10.1016/j.aca.2021.338575. Epub 2021 Apr 29.

Authors

Pan Zhang¹, Yin Xiao², Jingjing Zhang³, Bingjie Liu⁴, Xiaofei Ma⁵, Yong Wang⁶

Affiliations

¹ School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, PR China. Electronic address: 2019210044@tju.edu.cn.
² School of Chemical Engineering and Technology, Tianjin Engineering Research Center Functional Fine Chemical, Tianjin University, Tianjin, 300072, PR China. Electronic address: xiaoyin@tju.edu.cn.
³ School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, PR China. Electronic address: xhangjing@tju.edu.cn.
⁴ School of Chemical Engineering and Technology, Tianjin Engineering Research Center Functional Fine Chemical, Tianjin University, Tianjin, 300072, PR China. Electronic address: bingjie_liu@tju.edu.cn.
⁵ School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, PR China. Electronic address: maxiaofei@tju.edu.cn.
⁶ School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, PR China. Electronic address: wangyongtju@tju.edu.cn.

PMID: 34119019
DOI: 10.1016/j.aca.2021.338575

Abstract

Highly selective, sensitive and fast gas sensing has attracted increasing attention in the fields of environmental protection, industrial production, personal safety as well as medical diagnostics. Field effect transistor (FET) sensors have been extensively investigated in gas sensing fields due to their small size, high sensitivity, high reliability and low energy consumption. This comprehensive review aims to discuss the recent advances in FET gas sensors based on materials such as carbon nanotubes, silicon carbide, silicon, metal oxides-, graphene-, transition metal dichalcogenides- and 2-dimensional black phosphorus. We first introduce different types of sensor structures and elaborate the gas-sensing mechanisms. Then, we describe the optimizing strategies for sensing performances, response parameters, FET based dual-mode sensors and FET based logic circuit sensors. Moreover, we present the key advances of the above materials in gas sensing performances. Meanwhile, shortcomings of such materials are also discussed and the future development of this field is proposed in this review.

Keywords: Field effect transistor; Gas sensors.

Publication types

Review