2D NbOI2 : A Chiral Semiconductor with Highly In-Plane Anisotropic Electrical and Optical Properties

Yuqiang Fang; Fakun Wang; Ruiqi Wang; Tianyou Zhai; Fuqiang Huang

doi:10.1002/adma.202101505

2D NbOI₂ : A Chiral Semiconductor with Highly In-Plane Anisotropic Electrical and Optical Properties

Adv Mater. 2021 Jul;33(29):e2101505. doi: 10.1002/adma.202101505. Epub 2021 Jun 6.

Authors

Yuqiang Fang¹, Fakun Wang², Ruiqi Wang³, Tianyou Zhai², Fuqiang Huang^{1

3}

Affiliations

¹ State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.
² State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China.
³ State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.

PMID: 34096119
DOI: 10.1002/adma.202101505

Abstract

Exploring in-plane anisotropic 2D materials is of great significance to the fundamental studies and further development of polarizationsensitive optoelectronics. Herein, chiral niobium oxide diiodide (NbOI₂ ) is introduced into the intriguing anisotropic 2D family with the experimental demonstration of anisotropic optical and electrical properties. 2D NbOI₂ crystals exhibit highly anisotropic dispersed band structures around the Fermi surface and strong in-plane anisotropy of phonon vibrations owing to the different bonding modes of Nb atoms along the b- and c-axes. Consequently, the anisotropic factors of optical absorbance and photoresponsivity in 2D NbOI₂ crystals reach up to 1.75 and 1.7, respectively. These anisotropic properties make 2D NbOI₂ an interesting platform for novel polarization-sensitive optoelectronic applications.

Keywords: NbOI 2; chiral 2D materials; in-plane anisotropy.

Abstract

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