Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors

Chen Chong; Hongxia Liu; Shulong Wang; Shupeng Chen; Haiwu Xie

doi:10.3390/mi12060609

Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors

Micromachines (Basel). 2021 May 24;12(6):609. doi: 10.3390/mi12060609.

Authors

Chen Chong¹, Hongxia Liu¹, Shulong Wang¹, Shupeng Chen¹, Haiwu Xie¹

Affiliation

¹ Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, China.

Abstract

Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption. T-shaped gate tunneling field-effect transistors (TGTFET) adapt double source and T-shaped gates to enhance the on-state current and to generate the tunneling probability. In this paper, TGTFET subjected to heavy-ion irradiation is studied by technology computer-aided design (TCAD) simulation for the first time. The results show that as the drain bias and linear energy transfer (LET) increase, the transient current and collected charge also increase. When LET = 100 MeV·cm²/mg and V_d = 0.5 V, the transient current of TGTFET is as high as 10.63 mA, which is much larger than the on-state current. This means that TGTFET is more sensitive to single-event effect (SEE) than FDSOI. By simulating a heavy-ion strike on different locations in TGTFET, the tunneling junction is the most sensitive region of SEE. This provides guidance for future research on the antiradiation application of TFET-based devices.

Keywords: T-shaped gate tunneling field-effect transistors (TGTFET); fully depleted silicon on insulator (FDSOI); linear energy transfer (LET); single-event effect (SEE); tunneling field-effect transistors (TFETS).