Optical absorption spectra and luminescence spectra were recorded as a function of temperature between 295 K and 800 K for single crystal samples of Gd2SiO5:Dy3+, Lu2SiO5:Dy3+, LiNbO3:Dy3+, and Gd3Ga3Al2O12:Dy3+ fabricated by the Czochralski method and of YAl3(BO3)4:Dy3+ fabricated by the top-seeded high temperature solution method. A thermally induced change of fluorescence intensity ratio (FIR) between the 4I15/2→ 6H15/2 and 4F9/2 → 6H15/2 emission bands of Dy3+ was inferred from experimental data. It was found that relative thermal sensitivities SR at 350 K are higher for YAl3(BO3)4:Dy3+ and Lu2SiO5:Dy3+than those for the remaining systems studied. Based on detailed examination of the structural peculiarities of the crystals it was ascertained that the observed difference between thermosensitive features cannot be attributed directly to the dissimilarity of structural factors consisting of the geometry and symmetry of Dy3+ sites, the number of non-equivalent Dy3+ sites, and the host anisotropy. Instead, it was found that a meaningful correlation between relative thermal sensitivity SR and rates of radiative transitions of Dy3+ inferred from the Judd-Ofelt treatment exists. It was concluded that generalization based on the Judd-Ofelt parameters and luminescence branching ratio analysis may be useful during a preliminary assessment of thermosensitive properties of new phosphor materials.
Keywords: Dy-doped crystals; luminescence; optical temperature sensors.