Corrigendum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (2021 Nanotechnology32 055702)

Nanotechnology. 2021 Jun 17;32(36). doi: 10.1088/1361-6528/ac0664.

¹ RIKEN Cluster for Pioneering Research (CPR), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
² RIKEN Center for Advanced Photonics (RAP), 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan.
³ Division of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan.
⁴ Department of Gigaphoton Next GLP, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan.
⁵ Marubun Corporation, Chuo, Tokyo 109-8577, Japan.

No abstract available

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