Fiber-Shaped Triboiontronic Electrochemical Transistor

Jinran Yu; Shanshan Qin; Huai Zhang; Yichen Wei; Xiaoxiao Zhu; Ya Yang; Qijun Sun

doi:10.34133/2021/9840918

Fiber-Shaped Triboiontronic Electrochemical Transistor

Research (Wash D C). 2021 Apr 26:2021:9840918. doi: 10.34133/2021/9840918. eCollection 2021.

Authors

Jinran Yu^{1

2}, Shanshan Qin^{1

3}, Huai Zhang¹, Yichen Wei^{1

4}, Xiaoxiao Zhu⁵, Ya Yang^{1

2

4}, Qijun Sun^{1

2

4}

Affiliations

¹ Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China.
² School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China.
³ Department of Materials Science WW-4, LKO, University of Erlangen-Nuremberg, Martensstrasse 7, 91058 Erlangen, Germany.
⁴ Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.
⁵ Beijing Institute of Fashion Technology, Beijing 100029, China.

Abstract

Contact electrification-activated triboelectric potential offers an efficient route to tuning the transport properties in semiconductor devices through electrolyte dielectrics, i.e., triboiontronics. Organic electrochemical transistors (OECTs) make more effective use of ion injection in the electrolyte dielectrics by changing the doping state of the semiconductor channel. However, the mainstream flexible/wearable electronics and OECT-based devices are usually modulated by electrical signals and constructed in conventional geometry, which lack direct and efficient interaction between the external environment and functional electronic devices. Here, we demonstrate a fiber-shaped triboiontronic electrochemical transistor with good electrical performances, including a current on/off ratio as high as ≈1286 with off-current at ~nA level, the average threshold displacements (D _th) of 0.3 mm, the subthreshold swing corresponding to displacement (SS_D) at 1.6 mm/dec, and excellent flexibility and durability. The proposed triboiontronic electrochemical transistor has great potential to be used in flexible, functional, and smart self-powered electronic textile.