Prototype Design of a Domain-Wall-Based Magnetic Memory Using a Single Layer La0.67Sr0.33MnO3 Thin Film

Shizhe Wu; Yuelin Zhang; Chengfeng Tian; Jianyu Zhang; Mei Wu; Yu Wang; Peng Gao; Haiming Yu; Yong Jiang; Jie Wang; Kangkang Meng; Jinxing Zhang

doi:10.1021/acsami.1c04724

Prototype Design of a Domain-Wall-Based Magnetic Memory Using a Single Layer La_0.67Sr_0.33MnO₃ Thin Film

ACS Appl Mater Interfaces. 2021 May 26;13(20):23945-23950. doi: 10.1021/acsami.1c04724. Epub 2021 May 11.

Authors

Shizhe Wu¹, Yuelin Zhang¹, Chengfeng Tian¹, Jianyu Zhang², Mei Wu³, Yu Wang⁴, Peng Gao³, Haiming Yu², Yong Jiang⁵, Jie Wang⁴, Kangkang Meng⁵, Jinxing Zhang¹

Affiliations

¹ Department of Physics, Beijing Normal University, Beijing, China.
² Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, Beijing 100875, China.
³ International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
⁴ Department of Engineering Mechanics & Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University, Hangzhou 310012, China.
⁵ School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.

PMID: 33974387
DOI: 10.1021/acsami.1c04724

Abstract

Magnetic field-free, nonvolatile magnetic memory with low power consumption is highly desired in information technology. In this work, we report a current-controllable alignment of magnetic domain walls in a single layer La_0.67Sr_0.33MnO₃ thin film with the threshold current density of 2 × 10⁵ A/cm² at room temperature. The vector relationship between current directions and domain-wall orientations indicates the dominant role of spin-orbit torque without an assistance of external magnetic field. Meanwhile, significant planar Hall resistances can be readout in a nonvolatile way before and after the domain-wall reorientation. A domain-wall-based magnetic random-access memory (DW-MRAM) prototype device has been proposed.

Keywords: field-free magnetic switching; magnetic domain wall; magnetic random-access memory; oxide materials; planar hall effect; spin−orbit coupling.