Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells

Xuan Li; Jianping Liu; Xujun Su; Siyi Huang; Aiqin Tian; Wei Zhou; Lingrong Jiang; Masao Ikeda; Hui Yang

doi:10.3390/ma14081877

Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells

Materials (Basel). 2021 Apr 9;14(8):1877. doi: 10.3390/ma14081877.

Authors

Xuan Li^{1

2

3}, Jianping Liu^{1

2

4}, Xujun Su¹, Siyi Huang^{1

2

4}, Aiqin Tian^{1

2}, Wei Zhou^{1

2}, Lingrong Jiang^{1

2

4}, Masao Ikeda^{1

2}, Hui Yang^{1

2

4}

Affiliations

¹ Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
² Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
³ Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China.
⁴ School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China.

Abstract

We have improved the material quality of the high indium composition InGaN/GaN multiple quantum wells (MQWs) grown on free-standing GaN substrates using the graded-indium-content superlattice. We found that by adopting a graded-indium-content superlattice structure, the spectral FWHM of the yellow emitting InGaN/GaN MQW was reduced from 181 meV to 160 meV, and the non-radiative recombination lifetime increased from 13 ns to 44 ns. Besides, the graded-indium-content superlattice can mitigate strain relaxation in high indium composition MQWs as shown by the TEM diffraction patterns.

Keywords: GaN; InGaN; multiple quantum wells; superlattice.

Abstract

Grants and funding