We measure the isothermal crystallization kinetics of amorphous acetonitrile films using molecular beam dosing and reflection adsorption infrared spectroscopy techniques. Experiments on a graphene covered Pt(111) substrate revealed that the crystallization rate slows dramatically during long time periods and that the overall kinetics cannot be described by a simple application of the Avrami equation. The crystallization kinetics also have a thickness dependence with the thinner films crystallizing much slower than the thicker ones. Additional experiments showed that decane layers at both the substrate and vacuum interfaces can also affect the crystallization rates. A comparison of the crystallization rates for CH3CN and CD3CN films showed only an isotope effect of ∼1.09. When amorphous films were deposited on a crystalline film, the crystalline layer did not act as a template for the formation of a crystalline growth front. These overall results suggest that the crystallization kinetics are complicated, indicating the possibility of multiple nucleation and growth mechanisms.