Implementing Dopant-Free Hole-Transporting Layers and Metal-Incorporated CsPbI2Br for Stable All-Inorganic Perovskite Solar Cells

Sawanta S Mali; Jyoti V Patil; Julian A Steele; Sachin R Rondiya; Nelson Y Dzade; Chang Kook Hong

doi:10.1021/acsenergylett.0c02385

Implementing Dopant-Free Hole-Transporting Layers and Metal-Incorporated CsPbI₂Br for Stable All-Inorganic Perovskite Solar Cells

ACS Energy Lett. 2021 Feb 12;6(2):778-788. doi: 10.1021/acsenergylett.0c02385. Epub 2021 Feb 1.

Authors

Sawanta S Mali¹, Jyoti V Patil^{1

2}, Julian A Steele³, Sachin R Rondiya⁴, Nelson Y Dzade⁴, Chang Kook Hong¹

Affiliations

¹ Polymer Energy Materials Laboratory, School of Advanced Chemical Engineering, Chonnam National University, Gwangju, South Korea, 61186.
² Optoelectronic Convergence Research Center (OCRC), Chonnam National University, Gwangju, South Korea, 61186.
³ cMACS, Department of Microbial and Molecular Systems, KU Leuven, 3001 Leuven, Belgium.
⁴ School of Chemistry, Cardiff University, Main Building, Park Place, Cardiff CF10 3AT, Wales, United Kingdom.

Abstract

Mixed-halide CsPbI₂Br perovskite is promising for efficient and thermally stable all-inorganic solar cells; however, the use of conventional antisolvent methods and additives-based hole-transporting layers (HTLs) currently hampers progress. Here, we have employed hot-air-assisted perovskite deposition in ambient condition to obtain high-quality photoactive CsPbI₂Br perovskite films and have extended stable device operation using metal cation doping and dopant-free hole-transporting materials. Density functional theory calculations are used to study the structural and optoelectronic properties of the CsPbI₂Br perovskite when it is doped with metal cations Eu²⁺ and In³⁺. We experimentally incorporated Eu²⁺ and In³⁺ metal ions into CsPbI₂Br films and applied dopant-free copper(I) thiocyanate (CuSCN) and poly(3-hexylthiophene) (P3HT)-based materials as low-cost hole transporting layers, leading to record-high power conversion efficiencies of 15.27% and 15.69%, respectively, and a retention of >95% of the initial efficiency over 1600 h at 85 °C thermal stress.