Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)[Formula: see text]As[Formula: see text]

Licheng Fu; Yilun Gu; Guoxiang Zhi; Haojie Zhang; Rufei Zhang; Jinou Dong; Xueqin Zhao; Lingfeng Xie; Fanlong Ning

doi:10.1038/s41598-021-86205-2

Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)[Formula: see text]As[Formula: see text]

Sci Rep. 2021 Apr 7;11(1):7652. doi: 10.1038/s41598-021-86205-2.

Authors

Licheng Fu¹, Yilun Gu¹, Guoxiang Zhi¹, Haojie Zhang¹, Rufei Zhang¹, Jinou Dong¹, Xueqin Zhao¹, Lingfeng Xie¹, Fanlong Ning^{1

2}

Affiliations

¹ Zhejiang Province Key Laboratory of Quantum Technology and Device and Department of Physics, Zhejiang University, Hangzhou, 310027 China.
² Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 China.

Abstract

We report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn[Formula: see text]Co[Formula: see text])[Formula: see text]As[Formula: see text] which has a maximum [Formula: see text] [Formula: see text] 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by [Formula: see text] 0.3[Formula: see text] with 15[Formula: see text] Sr doping, but drastically increase the ferromagnetic transition temperature by 18[Formula: see text] to 53 K. Our experiment unequivocally demonstrate that the parameters of Zn(Co)As[Formula: see text] tetrahedra play a vital role in the formation of ferromagnetic ordering in the Ba(Zn,Co)[Formula: see text]As[Formula: see text] DMS.