Polymeric Hole Transport Materials for Red CsPbI3 Perovskite Quantum-Dot Light-Emitting Diodes

Zong-Liang Tseng; Shih-Hung Lin; Jian-Fu Tang; Yu-Ching Huang; Hsiang-Chih Cheng; Wei-Lun Huang; Yi-Ting Lee; Lung-Chien Chen

doi:10.3390/polym13060896

Polymeric Hole Transport Materials for Red CsPbI₃ Perovskite Quantum-Dot Light-Emitting Diodes

Polymers (Basel). 2021 Mar 15;13(6):896. doi: 10.3390/polym13060896.

Authors

Zong-Liang Tseng¹, Shih-Hung Lin², Jian-Fu Tang³, Yu-Ching Huang⁴, Hsiang-Chih Cheng⁵, Wei-Lun Huang¹, Yi-Ting Lee⁶, Lung-Chien Chen⁵

Affiliations

¹ Department of Electronic Engineering, Ming Chi University of Technology, No. 84, Gungjuan Rd., New Taipei City 24301, Taiwan.
² Department of Electronic Engineering, National Yunlin University of Science and Technology, Yunlin 64002, Taiwan.
³ Bachelor Program in Interdisciplinary Studies, National Yunlin University of Science and Technology, Yunlin 64002, Taiwan.
⁴ Department of Materials Engineering, Ming Chi University of Technology, No. 84, Gungjuan Rd., New Taipei City 24301, Taiwan.
⁵ Department of Electro-Optical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 10608, Taiwan.
⁶ Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395, Japan.

Abstract

In this study, the performances of red CsPbI₃-based all-inorganic perovskite quantum-dot light-emitting diodes (IPQLEDs) employing polymeric crystalline Poly(3-hexylthiophene-2,5-diyl) (P3HT), poly(9-vinycarbazole) (PVK), Poly(N,N'-bis-4-butylphenyl-N,N'-bisphenyl)benzidine (Poly-TPD) and 9,9-Bis[4-[(4-ethenylphenyl)methoxy]phenyl]-N2,N7-di-1-naphthalenyl-N2,N7-diphenyl-9H-fluorene-2,7-diamine (VB-FNPD) as the hole transporting layers (HTLs) have been demonstrated. The purpose of this work is an attempt to promote the development of device structures and hole transporting materials for the CsPbI₃-based IPQLEDs via a comparative study of different HTLs. A full-coverage quantum dot (QD) film without the aggregation can be obtained by coating it with VB-FNPD, and thus, the best external quantum efficiency (EQE) of 7.28% was achieved in the VB-FNPD device. We also reported a standing method to further improve the degree of VB-FNPD polymerization, resulting in the improved device performance, with the EQE of 8.64%.

Keywords: CsPbI3; QD; light-emitting diodes; perovskite.