Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes

Shiyu Zhang; Zeng Liu; Yuanyuan Liu; Yusong Zhi; Peigang Li; Zhenping Wu; Weihua Tang

doi:10.3390/mi12030259

Electrical Characterizations of Planar Ga₂O₃ Schottky Barrier Diodes

Micromachines (Basel). 2021 Mar 3;12(3):259. doi: 10.3390/mi12030259.

Authors

Shiyu Zhang¹, Zeng Liu^{1

2

3}, Yuanyuan Liu^{4

5}, Yusong Zhi¹, Peigang Li¹, Zhenping Wu¹, Weihua Tang^{1

2

3}

Affiliations

¹ Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
² College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
³ National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
⁴ Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
⁵ The Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

Abstract

In this work, a Schottky barrier diode (SBD) is fabricated and demonstrated based on the edge-defined film-fed grown (EFG) Ga₂O₃ crystal substrate. At the current stage, for high resistance un-doped Ga₂O₃ films and/or bulk substrates, the carrier concentration (and other electrical parameters) is difficult to be obtained by using the conventional Hall measurement. Therefore, we extracted the electrical parameters such as on-state resistance (R_on), Schottky barrier height (ϕB), the ideal factor (n), series resistance (R_s) and the carrier concentration (N_d) by analyzing the current density-voltage (J-V) and capacitance-voltage (C-V) curves of the Ga₂O₃-based SBD, systematically. The detailed measurements and theoretical analysis are displayed in this paper.

Keywords: C–V; Ga2O3; I–V; Schottky diode.

Abstract

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