Since the dielectric permittivity of ferroelectric materials depends on the electric field, they allow designing switchable and continuously tunable devices for adaptive microwave front ends. Part of the ongoing research is the field of all-oxide devices, where epitaxial oxide conductors are used instead of polycrystalline metal electrodes, leading to epitaxial ferroelectric layers and resulting in high device performance. In particular, they allow engineering the acoustic properties separated from the electric ones due to the structural similarity between the dielectric and conducting oxide films. Two major results are reported in this work. First, a highly accurate model for the microwave impedance of ferroelectric varactors is derived that tracks the superposition of induced piezoelectricity and field extrusion into the substrate caused by thin electrodes. In difference to previous works, this model covers both a wide frequency and biasing range up to 12 GHz and 100 V/ [Formula: see text]. Second, the high model accuracy enables the determination of all relevant electric and mechanic properties based on a mere microwave characterization. This approach will be especially valuable when independent measurements of mechanical properties of the thin-film materials are impeded by a high integration of the devices. Though derived for all-oxide varactors, the presented model can as well be adapted for thin-film bulk acoustic wave resonators (FBARs) and varactors with conventional metal electrodes when eventual dead layers at the interface are modeled correctly.