A Ti seed film is investigated towards improving the far UV reflectance of Al/MgF2 mirrors. Samples were initially coated with a Ti film in half of the area and they were later coated in the full area with an Al film and protected with MgF2. All materials were deposited by evaporation. Samples were prepared with the MgF2 layer deposited either at room temperature (RT) or at 225°C. A 3-nm thick Ti seed film was seen to significantly increase the reflectance of Al/MgF2 mirrors at the well-known reflectance dip centered at ∼160 nm; this was attributed to a reduction of short-range surface roughness at the Al/MgF2 interface, which is responsible for radiation absorption through surface-plasmon (SP) coupling. SP absorption was more efficiently reduced with a Ti seed film on samples fully deposited at RT. A Ti seed film as thin as 1 nm provided the largest SP absorption reduction, and the SP dip was almost completely removed.