Overgrowth of Single Crystal Diamond Using Defect-Selective Etching and Epitaxy Technique in Chemical Vapor Deposition

Jonggeon Lee; Taemyung Kwak; Geunho Yoo; Seongwoo Kim; Okhyun Nam

doi:10.1166/jnn.2021.19413

Overgrowth of Single Crystal Diamond Using Defect-Selective Etching and Epitaxy Technique in Chemical Vapor Deposition

J Nanosci Nanotechnol. 2021 Aug 1;21(8):4412-4417. doi: 10.1166/jnn.2021.19413.

Authors

Jonggeon Lee¹, Taemyung Kwak¹, Geunho Yoo¹, Seongwoo Kim², Okhyun Nam¹

Affiliations

¹ Department of Nano-Semiconductor Engineering, Korea Polytechnic University (KPU), Siheung-si, Gyeonggi-do 429-793, Republic of Korea.
² Adamant Namiki Precision Jewel Company Limited, Adachi, Tokyo 123-8511, Japan.

PMID: 33714336
DOI: 10.1166/jnn.2021.19413

Abstract

In this study, we demonstrated the defect-selective etching and epitaxy technique for defect reduction of a heteroepitaxial chemical vapor deposition (CVD) diamond substrate. First, an 8 nm layer of nickel was deposited on the diamond surface using an e-beam evaporator. Then, defect-selective etching was conducted through an in situ single process using microwave plasma chemical vapor deposition (MPCVD). After defect-selective etching, the diamond layer was overgrown by MPCVD. The defect density measured from the atomic force microscope image decreased from 3.27×10⁸ to 2.02×10⁸ cm^-2. The first-order Raman peak of diamond shifted from 1340 to 1336 cm^-1, and the full width at half maximum (FWHM) decreased from 9.66 to 7.66 cm^-1. Through the defect-selective etching and epitaxy technique, it was confirmed that the compressive stress was reduced and the crystal quality improved.